IQE006 Series

Catalog

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3X3.3 SOURCE-DOWN PACKAGE; 0.65 MOHM;

Part	Supplier Device Package	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IQE006NE2LM5CGATMA1	PG-TTFN-9-1	N-Channel	2.1 W 89 W	-55 °C	150 °C	25 V	Surface Mount	0.65 mOhm	8-PowerTDFN	82.1 nC	16 V	MOSFET (Metal Oxide)	41 A 298 A	2 V	5453 pF
Infineon Technologies IQE006NE2LM5ATMA1	PG-TSON-8-4	N-Channel	2.1 W 89 W	-55 °C	150 °C	25 V	Surface Mount	0.65 mOhm	8-PowerTDFN	82.1 nC	16 V	MOSFET (Metal Oxide)	41 A 298 A	2 V	5453 pF	4.5 V 10 V