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CSD17318Q2

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 16.9 MOHM 6-WSON -55 TO 150

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CSD17318Q2 - https://ti.com/content/dam/ticom/images/products/package/d/dqk0006a.png

CSD17318Q2

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 16.9 MOHM 6-WSON -55 TO 150

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCSD17318Q2CSD17318Q2 Series
Current - Continuous Drain (Id) @ 25°C25 A25 A
Drain to Source Voltage (Vdss)30 V30 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 2.5 V2.5 - 8 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]879 pF879 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Power Dissipation (Max) [Max]16 W16 W
Rds On (Max) @ Id, Vgs15.1 mOhm15.1 mOhm
Supplier Device Package6-WSON (2x2)6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max) [Max]10 V10 V
Vgs (Max) [Min]-10 V-10 V
Vgs(th) (Max) @ Id [Max]1.2 V1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigiKeyDigi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1$ 0.63
10$ 0.39
100$ 0.25
500$ 0.19
1000$ 0.17
3000$ 0.13
6000$ 0.12
9000$ 0.11
15000$ 0.11
21000$ 0.10
30000$ 0.10
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.13
9000$ 0.11
30000$ 0.11
75000$ 0.11
LCSCN/A 5$ 0.23
50$ 0.19
150$ 0.17
500$ 0.14
3000$ 0.13
6000$ 0.12
Mouser ElectronicsN/A 1$ 0.49
10$ 0.32
100$ 0.17
1000$ 0.15
3000$ 0.11
9000$ 0.10
24000$ 0.10
45000$ 0.10
Texas InstrumentsLARGE T&R 1$ 0.23
100$ 0.15
250$ 0.12
1000$ 0.08
Win Source ElectronicsN/A 320$ 0.16
680$ 0.15
1060$ 0.14
1520$ 0.13
1975$ 0.13
2465$ 0.12

CSD17318Q2 Series

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

PartSupplier Device PackagePower Dissipation (Max) [Max]Vgs (Max) [Max]Vgs (Max) [Min]Drain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ Vds [Max]TechnologyCurrent - Continuous Drain (Id) @ 25°CFET TypeMounting TypeGate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ Id [Max]Operating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments
CSD17318Q2T
6-WSON (2x2)
16 W
10 V
-10 V
30 V
15.1 mOhm
879 pF
MOSFET (Metal Oxide)
25 A
N-Channel
Surface Mount
6 nC
1.2 V
150 °C
-55 °C
2.5 V, 8 V
Texas Instruments
CSD17318Q2
6-WSON (2x2)
16 W
10 V
-10 V
30 V
15.1 mOhm
879 pF
MOSFET (Metal Oxide)
25 A
N-Channel
Surface Mount
6 nC
1.2 V
150 °C
-55 °C
2.5 V, 8 V

Description

General part information

CSD17318Q2 Series

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.