CSD17318Q2 Series
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm
| Part | Supplier Device Package | Power Dissipation (Max) [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17318Q2T | 6-WSON (2x2) | 16 W | 10 V | -10 V | 30 V | 15.1 mOhm | 879 pF | MOSFET (Metal Oxide) | 25 A | N-Channel | Surface Mount | 6 nC | 1.2 V | 150 °C | -55 °C | 2.5 V, 8 V |
Texas Instruments CSD17318Q2 | 6-WSON (2x2) | 16 W | 10 V | -10 V | 30 V | 15.1 mOhm | 879 pF | MOSFET (Metal Oxide) | 25 A | N-Channel | Surface Mount | 6 nC | 1.2 V | 150 °C | -55 °C | 2.5 V, 8 V |
Key Features
• Optimized for 5V gate driveLow capacitance and chargeLow RDS(ON)Low-thermal resistanceLead freeRoHS compliantHalogen freeSON 2mm × 2mm plastic packageOptimized for 5V gate driveLow capacitance and chargeLow RDS(ON)Low-thermal resistanceLead freeRoHS compliantHalogen freeSON 2mm × 2mm plastic package
Description
AI
This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.
This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.