Specification	RN1103MFV,L3F(CT

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	70
Mounting Type	Surface Mount
Package / Case	SOT-723
Package Name	VESM
Power - Max	150 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	22 kOhms
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1103 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 22 kΩ/22 kΩ, SOT-416(SSM)

Part	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Vce Saturation (Max)	Transistor Type	Resistor - Base (R1) Resistance	Package / Case	DC Current Gain (hFE) (Min)	Package Name	Resistor - Emitter Base (R2)	Mounting Type	Power - Max	Frequency - Transition
Toshiba Semiconductor and Storage RN1103MFV(TPL3)	50 V	0.1 mA	500 nA	300 mV	NPN Pre-Biased	22 kOhm	SOT-723	70	VESM	22 kOhms	Surface Mount	150 mW
Toshiba Semiconductor and Storage RN1103,LF(CT	50 V	0.1 mA	500 nA	300 mV	NPN Pre-Biased	22 kOhm	SC-75 SOT-416	70	SSM	22 kOhms	Surface Mount	100 mW	250 MHz
Toshiba Semiconductor and Storage RN1103MFV,L3F(CT	50 V	0.1 mA	500 nA	300 mV	NPN Pre-Biased	22 kOhm	SOT-723	70	VESM	22 kOhms	Surface Mount	150 mW
Toshiba Semiconductor and Storage RN1103MFV,L3F	50 V	0.1 mA	500 nA	300 mV	NPN Pre-Biased	22 kOhm	SOT-723	70	VESM	22 kOhms	Surface Mount	150 mW

Pricing

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