TRANS PREBIAS NPN 50V 0.1A VESM
| Part | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Transistor Type | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Package / Case | Mounting Type | Resistor - Base (R1) | Supplier Device Package | Power - Max [Max] | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 22 kOhms | 70 | 100 mA | NPN - Pre-Biased | 500 nA | 50 V | 300 mV | SOT-723 | Surface Mount | 22 kOhms | VESM | 150 mW | |
Toshiba Semiconductor and Storage | 22 kOhms | 70 | 100 mA | NPN - Pre-Biased | 500 nA | 50 V | 300 mV | SC-75 SOT-416 | Surface Mount | 22 kOhms | SSM | 100 mW | 250 MHz |
Toshiba Semiconductor and Storage | 22 kOhms | 70 | 100 mA | NPN - Pre-Biased | 500 nA | 50 V | 300 mV | SOT-723 | Surface Mount | 22 kOhms | VESM | 150 mW | |
Toshiba Semiconductor and Storage | 22 kOhms | 70 | 100 mA | NPN - Pre-Biased | 500 nA | 50 V | 300 mV | SOT-723 | Surface Mount | 22 kOhms | VESM | 150 mW |