RN1103MFV(TPL3)

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1103MFV(TPL3)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	Resistor - Base (R1)	Supplier Device Package	Power - Max [Max]	Frequency - Transition
Toshiba Semiconductor and Storage RN1103MFV(TPL3)	22 kOhms	70	100 mA	NPN - Pre-Biased	500 nA	50 V	300 mV	SOT-723	Surface Mount	22 kOhms	VESM	150 mW
Toshiba Semiconductor and Storage RN1103,LF(CT	22 kOhms	70	100 mA	NPN - Pre-Biased	500 nA	50 V	300 mV	SC-75 SOT-416	Surface Mount	22 kOhms	SSM	100 mW	250 MHz
Toshiba Semiconductor and Storage RN1103MFV,L3F(CT	22 kOhms	70	100 mA	NPN - Pre-Biased	500 nA	50 V	300 mV	SOT-723	Surface Mount	22 kOhms	VESM	150 mW
Toshiba Semiconductor and Storage RN1103MFV,L3F	22 kOhms	70	100 mA	NPN - Pre-Biased	500 nA	50 V	300 mV	SOT-723	Surface Mount	22 kOhms	VESM	150 mW

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Technical documentation and resources