Technical Specifications
Parameters and characteristics for this part
| Specification | STGP8NC60KD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 19 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 65 W |
| Reverse Recovery Time (trr) | 23.5 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 85 µJ, 55 µJ |
| Td (on/off) @ 25°C | 72 ns, 17 ns |
| Test Condition | 3 A, 390 V, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
STGP8M120DF3 Series
Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
| Part | Package / Case | IGBT Type | Test Condition | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Current - Collector (Ic) (Max) [Max] | Reverse Recovery Time (trr) | Gate Charge | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Switching Energy | Vce(on) (Max) @ Vge, Ic | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | TO-220-3 | Trench Field Stop | 8 A 15 V 33 Ohm 600 V | 32 A | 20 ns 126 ns | 16 A | 103 ns | 32 nC | Through Hole | 1200 V | -55 °C | 175 ░C | TO-220 | 370 µJ 390 µJ | ||
STMicroelectronics | TO-220-3 | 3 A 10 Ohm 15 V 390 V | 30 A | 17 ns 72 ns | 15 A | 23.5 ns | 19 nC | Through Hole | 600 V | -55 °C | 150 °C | TO-220 | 55 µJ 85 µJ | 2.75 V | 65 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.46 | |
| 50 | $ 1.17 | |||
| 100 | $ 0.93 | |||
| 500 | $ 0.79 | |||
| 1000 | $ 0.64 | |||
| 2000 | $ 0.60 | |||
| 5000 | $ 0.58 | |||
| 10000 | $ 0.55 | |||
Description
General part information
STGP8M120DF3 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources