Technical Specifications
Parameters and characteristics for this part
| Specification | STGP8M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 16 A |
| Current - Collector Pulsed (Icm) | 32 A |
| Gate Charge | 32 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 103 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 390 µJ, 370 µJ |
| Td (on/off) @ 25°C | 20 ns, 126 ns |
| Test Condition | 600 V, 8 A, 15 V, 33 Ohm |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 2.39 | |
Description
General part information
STGP8M120DF3 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.