STGP8M120DF3 Series

Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package

Catalog

Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package

Part	Package / Case	IGBT Type	Test Condition	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Gate Charge	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Switching Energy	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]
STMicroelectronics STGP8M120DF3	TO-220-3	Trench Field Stop	8 A 15 V 33 Ohm 600 V	32 A	20 ns 126 ns	16 A	103 ns	32 nC	Through Hole	1200 V	-55 °C	175 ░C	TO-220	370 µJ 390 µJ
STMicroelectronics STGP8NC60KD	TO-220-3		3 A 10 Ohm 15 V 390 V	30 A	17 ns 72 ns	15 A	23.5 ns	19 nC	Through Hole	600 V	-55 °C	150 °C	TO-220	55 µJ 85 µJ	2.75 V	65 W

Catalog

Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.