DMT3006LPB-13
ActiveDiodes Inc
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT3006LPB-13
ActiveDiodes Inc
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT3006LPB-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 50 A, 14 A, 35 A, 11 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 11.1 mOhm, 6 mOhm |
| Supplier Device Package | PowerDI5060-8 (Type S) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.26 | |
| 5000 | $ 0.24 | |||
| 7500 | $ 0.23 | |||
| 12500 | $ 0.22 | |||
| 17500 | $ 0.22 | |||
Description
General part information
DMT3006LFDFQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources