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DMT3006LPB-13

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Diodes Inc

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT3006LPB-13

Active
Diodes Inc

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT3006LPB-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C50 A, 14 A, 35 A, 11 A
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Rds On (Max) @ Id, Vgs11.1 mOhm, 6 mOhm
Supplier Device PackagePowerDI5060-8 (Type S)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.26
5000$ 0.24
7500$ 0.23
12500$ 0.22
17500$ 0.22

Description

General part information

DMT3006LFDFQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.