DMT3006LFDFQ-7
ActiveDiodes Inc
TRANSISTOR MOSFET N-CH 30V 14.1A 6-PIN UDFN2020 T/R
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DMT3006LFDFQ-7
ActiveDiodes Inc
TRANSISTOR MOSFET N-CH 30V 14.1A 6-PIN UDFN2020 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT3006LFDFQ-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14.1 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 3.7 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1155 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) [Max] | 800 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 7 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.16 | |
| 6000 | $ 0.15 | |||
| 9000 | $ 0.14 | |||
| 30000 | $ 0.14 | |||
| 75000 | $ 0.13 | |||
Description
General part information
DMT3006LFDFQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources