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DMT3006LFDF-13 - Package Image for U-DFN2020-6

DMT3006LFDF-13

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Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT3006LFDF-13 - Package Image for U-DFN2020-6

DMT3006LFDF-13

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT3006LFDF-13
Current - Continuous Drain (Id) @ 25°C14.1 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 3.7 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1320 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageU-DFN2020-6 (Type F)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.16
20000$ 0.15
30000$ 0.14

Description

General part information

DMT3006LFDFQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.