Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC6H065BY-TR | STPSC6 Series |
|---|---|---|
| Capacitance @ Vr, F | 300 pF | 300 - 330 pF |
| Current - Average Rectified (Io) | 6 A | 6 A |
| Current - Average Rectified (Io) (per Diode) | - | 6 A |
| Current - Reverse Leakage @ Vr | 60 µA | 60 - 400 µA |
| Diode Configuration | - | 1 Pair Series Connection |
| Grade | Automotive | Automotive |
| Mounting Type | Surface Mount | Through Hole, Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 | TO-220-3, SC-63, DPAK (2 Leads + Tab), TO-252-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Qualification | AEC-Q101 | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | DPAK | TO-220AB Insulated, DPAK, D2PAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 1.2 - 650 V |
| Voltage - Forward (Vf) (Max) @ If | - | 1.75 - 1.9 V |
STPSC6 Series
2 x 650V tandem, 6 A High Surge Silicon Carbide Power Schottky Diode
| Part | Speed | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Current - Reverse Leakage @ Vr | Package / Case | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Mounting Type | Diode Configuration | Grade | Capacitance @ Vr, F | Current - Average Rectified (Io) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC6TH13TI | No Recovery Time | 1.75 V | 6 A | TO-220AB Insulated | 60 µA | TO-220-3 | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Through Hole | 1 Pair Series Connection | ||||
STMicroelectronics STPSC6H065BY-TR | No Recovery Time | DPAK | 60 µA | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | Automotive | 300 pF | 6 A | AEC-Q101 | |||
STMicroelectronics STPSC6H065B-TR | No Recovery Time | 1.75 V | DPAK | 60 µA | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | 300 pF | 6 A | ||||
STMicroelectronics STPSC6H065G-TR | No Recovery Time | 1.75 V | D2PAK | 60 µA | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | 0 ns | 650 V | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | 300 pF | 6 A | ||||
STMicroelectronics STPSC6H12B-TR1 | No Recovery Time | 1.9 V | DPAK | 400 µA | DPAK (2 Leads + Tab), SC-63, TO-252-3 | 0 ns | 1.2 kV | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | 330 pF | 6 A |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.44 | |
| 10 | $ 2.24 | |||
| 100 | $ 1.56 | |||
| 500 | $ 1.27 | |||
| 1000 | $ 1.18 | |||
| Digi-Reel® | 1 | $ 3.44 | ||
| 10 | $ 2.24 | |||
| 100 | $ 1.56 | |||
| 500 | $ 1.27 | |||
| 1000 | $ 1.18 | |||
| Tape & Reel (TR) | 2500 | $ 1.09 | ||
Description
General part information
STPSC6 Series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Documents
Technical documentation and resources