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STPSC6H12B-TR1 - MFG_DPAK(TO252-3)

STPSC6H12B-TR1

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STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A 3-PIN(2+TAB) DPAK-HV T/R

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STPSC6H12B-TR1 - MFG_DPAK(TO252-3)

STPSC6H12B-TR1

Active
STMicroelectronics

DIODE SCHOTTKY 1.2KV 6A 3-PIN(2+TAB) DPAK-HV T/R

Deep-Dive with AI

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.85
10$ 2.44
100$ 1.90
500$ 1.60
1000$ 1.50
Digi-Reel® 1$ 4.22
10$ 2.78
100$ 1.96
500$ 1.61
1000$ 1.50
Tape & Reel (TR) 2500$ 1.45
5000$ 1.45
NewarkEach (Supplied on Cut Tape) 1$ 4.83
10$ 3.47
25$ 3.31
50$ 3.17
100$ 3.03
250$ 2.87
500$ 2.81
1000$ 2.76

Description

General part information

STPSC6 Series

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.