Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC6H065G-TR | STPSC6H065 Series |
|---|---|---|
| Capacitance @ Vr, F | 300 pF | 300 pF |
| Current - Average Rectified (Io) | 6 A | 6 A |
| Current - Reverse Leakage @ Vr | 60 µA | 60 µA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | D2PAK | D2PAK, DPAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V | 1.75 V |
STPSC6H065 Series
650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
| Part | Speed | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC6H065G-TR | No Recovery Time | 1.75 V | 650 V | D2PAK | 300 pF | 0 ns | 6 A | 60 µA | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
STMicroelectronics STPSC6H065B-TR | No Recovery Time | 1.75 V | 650 V | DPAK | 300 pF | 0 ns | 6 A | 60 µA | -40 °C | 175 ░C | SiC (Silicon Carbide) Schottky | Surface Mount | DPAK (2 Leads + Tab), SC-63, TO-252-3 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.57 | |
| 10 | $ 2.14 | |||
| 100 | $ 1.70 | |||
| 500 | $ 1.44 | |||
| Digi-Reel® | 1 | $ 2.57 | ||
| 10 | $ 2.14 | |||
| 100 | $ 1.70 | |||
| 500 | $ 1.44 | |||
| Tape & Reel (TR) | 1000 | $ 1.16 | ||
| 2000 | $ 1.09 | |||
| 3000 | $ 1.08 | |||
Description
General part information
STPSC6H065 Series
This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC6H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.