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STPSC6H065BY-TR - DPAK

STPSC6H065BY-TR

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STMicroelectronics

AUTOMOTIVE 650 V, 6 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

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STPSC6H065BY-TR - DPAK

STPSC6H065BY-TR

Active
STMicroelectronics

AUTOMOTIVE 650 V, 6 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Deep-Dive with AI

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.44
10$ 2.24
100$ 1.56
500$ 1.27
1000$ 1.18
Digi-Reel® 1$ 3.44
10$ 2.24
100$ 1.56
500$ 1.27
1000$ 1.18
Tape & Reel (TR) 2500$ 1.09

Description

General part information

STPSC6 Series

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.