STP10N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.55 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +26

STP10N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.55 OHM TYP., 7.5 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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DocumentsDatasheet Technical Data Sheet EN +26

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Technical Specifications

Parameters and characteristics for this part

Specification	STP10N60M2

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STP10N60M2 Series

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Operating Temperature
STMicroelectronics STP10NM60N	-55 °C	150 °C	19 nC	TO-220-3	N-Channel	Through Hole	25 V	4 V	600 V	70 W	TO-220	MOSFET (Metal Oxide)	540 pF	10 V	10 A
STMicroelectronics STP10NM65N	-55 °C	150 °C		TO-220-3	N-Channel	Through Hole	25 V	4 V	650 V	90 W	TO-220	MOSFET (Metal Oxide)	850 pF	10 V	9 A	480 mOhm	25 nC
STMicroelectronics STP10NM50N	-55 °C	150 °C	17 nC	TO-220-3	N-Channel	Through Hole	25 V	4 V	500 V	70 W	TO-220	MOSFET (Metal Oxide)	450 pF	10 V	7 A	630 mOhm
STMicroelectronics STP10N95K5	-55 °C	150 °C		TO-220-3	N-Channel	Through Hole	30 V	5 V	950 V	130 W	TO-220	MOSFET (Metal Oxide)	630 pF	10 V	8 A	800 mOhm	22 nC
STMicroelectronics STP10N60M2	-55 °C	150 °C	13.5 nC	TO-220-3	N-Channel	Through Hole	25 V	4 V	600 V		TO-220	MOSFET (Metal Oxide)		10 V	7.5 A	600 mOhm		400 pF	85 W
STMicroelectronics STP10P6F6			6.4 nC	TO-220-3	P-Channel	Through Hole	20 V	4 V	60 V		TO-220	MOSFET (Metal Oxide)	340 pF	10 V	10 A	160 mOhm				175 °C
STMicroelectronics STP10NK50Z	-55 °C	150 °C	39.2 nC	TO-220-3	N-Channel	Through Hole	30 V	4.5 V	500 V	125 W	TO-220	MOSFET (Metal Oxide)	1219 pF	10 V	9 A	700 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.70
		50	$ 0.69
		100	$ 0.69
		500	$ 0.63
		1000	$ 0.57
		2000	$ 0.56
		5000	$ 0.54
		10000	$ 0.53
Newark	Each	1	$ 1.08
		10	$ 1.03
		100	$ 0.95
		500	$ 0.91
		1000	$ 0.88
		3000	$ 0.85
		10000	$ 0.84

Description

General part information

STP10N60M2 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.

STP10N60M2

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STP10N60M2

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Technical Specifications

STP10N60M2 Series

Pricing

Description

STP10N60M2 Series

Documents

Datasheet

Technical Data Sheet EN

Product Change Notice EN

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STP10N60M2 Series