STP10N95K5

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STMicroelectronics

N-CHANNEL 950 V, 0.65 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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STP10N95K5

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STMicroelectronics

N-CHANNEL 950 V, 0.65 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STP10 Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Technical Specifications

Parameters and characteristics for this part

Specification	STP10N95K5

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	630 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220
Power Dissipation (Max)	130 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STP10 Series

N-channel 800 V, 0.78 Ohm typ., 9 A SuperMESH Power MOSFETs in a TO-220FP package

Part	Technology	FET Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Package Name	Mounting Type	Operating Temperature
STMicroelectronics STP10NM60N	MOSFET (Metal Oxide)	N-Channel	70 W	-55 °C	150 °C	540 pF	TO-220-3	10 V	4 V	10 A	550 mOhm	19 nC	600 V	25 V	TO-220	Through Hole
STMicroelectronics STP10NK80ZFP	MOSFET (Metal Oxide)	N-Channel	40 W	-55 °C	150 °C	2180 pF	TO-220-3 Full Pack	10 V	4.5 V	9 A	0.9 Ohm	72 nC	800 V	30 V	TO-220FP	Through Hole
STMicroelectronics STP10N65K3	MOSFET (Metal Oxide)	N-Channel	150 W	-55 °C	150 °C	1180 pF	TO-220-3	10 V	4.5 V	10 A	1 Ohm	42 nC	650 V	30 V	TO-220	Through Hole
STMicroelectronics STP10NM65N	MOSFET (Metal Oxide)	N-Channel	90 W	-55 °C	150 °C	850 pF	TO-220-3	10 V	4 V	9 A	480 mOhm	25 nC	650 V	25 V	TO-220	Through Hole
STMicroelectronics STP10NM50N	MOSFET (Metal Oxide)	N-Channel	70 W	-55 °C	150 °C	450 pF	TO-220-3	10 V	4 V	7 A	630 mOhm	17 nC	500 V	25 V	TO-220	Through Hole
STMicroelectronics STP10N95K5	MOSFET (Metal Oxide)	N-Channel	130 W	-55 °C	150 °C	630 pF	TO-220-3	10 V	5 V	8 A	800 mOhm	22 nC	950 V	30 V	TO-220	Through Hole
STMicroelectronics STP10N60M2	MOSFET (Metal Oxide)	N-Channel	85 W	-55 °C	150 °C	400 pF	TO-220-3	10 V	4 V	7.5 A	600 mOhm	13.5 nC	600 V	25 V	TO-220	Through Hole
STMicroelectronics STP10LN80K5	MOSFET (Metal Oxide)	N-Channel	110 W	-55 °C	150 °C	427 pF 427 pF	TO-220-3	10 V	5 V	8 A	630 mOhm	15 nC	800 V	30 V	TO-220	Through Hole
STMicroelectronics STP10P6F6	MOSFET (Metal Oxide)	P-Channel	30 W			340 pF	TO-220-3	10 V	4 V	10 A	160 mOhm	6.4 nC	60 V	20 V	TO-220	Through Hole	175 °C
STMicroelectronics STP10NK50Z	MOSFET (Metal Oxide)	N-Channel	125 W	-55 °C	150 °C	1219 pF	TO-220-3	10 V	4.5 V	9 A	700 mOhm	39.2 nC	500 V	30 V	TO-220	Through Hole