STP10N60M2 Series

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package

Catalog

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Operating Temperature
STMicroelectronics STP10NM60N	-55 °C	150 °C	19 nC	TO-220-3	N-Channel	Through Hole	25 V	4 V	600 V	70 W	TO-220	MOSFET (Metal Oxide)	540 pF	10 V	10 A
STMicroelectronics STP10NM65N	-55 °C	150 °C		TO-220-3	N-Channel	Through Hole	25 V	4 V	650 V	90 W	TO-220	MOSFET (Metal Oxide)	850 pF	10 V	9 A	480 mOhm	25 nC
STMicroelectronics STP10NM50N	-55 °C	150 °C	17 nC	TO-220-3	N-Channel	Through Hole	25 V	4 V	500 V	70 W	TO-220	MOSFET (Metal Oxide)	450 pF	10 V	7 A	630 mOhm
STMicroelectronics STP10N95K5	-55 °C	150 °C		TO-220-3	N-Channel	Through Hole	30 V	5 V	950 V	130 W	TO-220	MOSFET (Metal Oxide)	630 pF	10 V	8 A	800 mOhm	22 nC
STMicroelectronics STP10N60M2	-55 °C	150 °C	13.5 nC	TO-220-3	N-Channel	Through Hole	25 V	4 V	600 V		TO-220	MOSFET (Metal Oxide)		10 V	7.5 A	600 mOhm		400 pF	85 W
STMicroelectronics STP10P6F6			6.4 nC	TO-220-3	P-Channel	Through Hole	20 V	4 V	60 V		TO-220	MOSFET (Metal Oxide)	340 pF	10 V	10 A	160 mOhm				175 °C
STMicroelectronics STP10NK50Z	-55 °C	150 °C	39.2 nC	TO-220-3	N-Channel	Through Hole	30 V	4.5 V	500 V	125 W	TO-220	MOSFET (Metal Oxide)	1219 pF	10 V	9 A	700 mOhm

Catalog

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package

Description

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.