Specification	TSM130NB06LCR

Current - Continuous Drain (Id) (Ta)	10 A
Current - Continuous Drain (Id) (Tc)	51 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	37 nC, 37 nC
Input Capacitance (Ciss) (Max)	2175 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerLDFN
Package Length	5.2 mm
Package Name	8-PDFN
Package Width	5.75 mm
Power Dissipation (Max)	83 W, 3.1 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

TSM130 Series

Part	Vgs (Max)	Package Name	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Technology
Taiwan Semiconductor Corporation TSM130NB06LCR	20 V	8-PDFN	5.2 mm	5.75 mm	2175 pF	37 nC 37 nC	Surface Mount	10 V	4.5 V	60 V	2.5 V	8-PowerLDFN	-55 °C	175 °C	3.1 W 83 W	13 mOhm	N-Channel	51 A	10 A	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM130NB06LCR RLG	20 V	8-PDFN	5.2 mm	5.75 mm	2175 pF	37 nC 37 nC	Surface Mount	10 V	4.5 V	60 V	2.5 V	8-PowerLDFN	-55 °C	175 °C	3.1 W 83 W	13 mOhm	N-Channel	51 A	10 A	MOSFET (Metal Oxide)