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TSM130NB06LCR - Symbol, Footprint, 3D Model

TSM130NB06LCR

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Taiwan Semiconductor Corporation

60V, 51A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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TSM130NB06LCR - Symbol, Footprint, 3D Model

TSM130NB06LCR

Active
Taiwan Semiconductor Corporation

60V, 51A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM130NB06LCR
Current - Continuous Drain (Id) @ 25°C51 A
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds2175 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerLDFN
Power Dissipation (Max)3.1 W, 83 W
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device Package8-PDFN
Supplier Device Package [x]5.2
Supplier Device Package [y]5.75
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

TSM130 Series

N-Channel 60 V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5.2x5.75)