TSM130NB06CR RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 10A/51A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 10A/51A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM130NB06CR RLG

Current - Continuous Drain (Id) @ 25°C	51 A
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 83 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM130NB06LCR	Surface Mount	8-PowerLDFN	2.5 V	13 mOhm	8-PDFN	5.75	5.2	60 V	4.5 V 10 V	N-Channel	3.1 W 83 W	-55 °C	175 ░C	2175 pF	MOSFET (Metal Oxide)	51 A	10 A	20 V
Taiwan Semiconductor Corporation TSM130NB06CR RLG	Surface Mount	8-PowerLDFN	4 V	13 mOhm	8-PDFN	5.75	5.2	60 V	10 V	N-Channel	3.1 W 83 W	-55 °C	175 ░C	2380 pF	MOSFET (Metal Oxide)	51 A	10 A	20 V	36 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical documentation and resources