60V, 51A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS
| Part | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Surface Mount | 8-PowerLDFN | 2.5 V | 13 mOhm | 8-PDFN | 5.75 | 5.2 | 60 V | 4.5 V 10 V | N-Channel | 3.1 W 83 W | -55 °C | 175 ░C | 2175 pF | MOSFET (Metal Oxide) | 51 A | 10 A | 20 V | |
Taiwan Semiconductor Corporation | Surface Mount | 8-PowerLDFN | 4 V | 13 mOhm | 8-PDFN | 5.75 | 5.2 | 60 V | 10 V | N-Channel | 3.1 W 83 W | -55 °C | 175 ░C | 2380 pF | MOSFET (Metal Oxide) | 51 A | 10 A | 20 V | 36 nC |