IR2125PBF

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Infineon Technologies

THE IR2125 IS A 500 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING

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IR2125PBF

Active

Infineon Technologies

THE IR2125 IS A 500 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2125PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	1.6 A
Current - Peak Output (Source, Sink) [custom]	3.3 A
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	26 ns
Rise / Fall Time (Typ) [custom]	43 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	0 V

IR2125 Series

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	Voltage - Supply [Max]	Gate Type	Package / Case	Package / Case	Package / Case	Input Type	Mounting Type	Channel Type	Supplier Device Package	Package / Case [x]	Package / Case [y]
Infineon Technologies IR2125	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET	0.3 in	8-DIP	7.62 mm	Non-Inverting	Through Hole	Single	8-PDIP
Infineon Technologies IR2125PBF	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET	0.3 in	8-DIP	7.62 mm	Non-Inverting	Through Hole	Single	8-PDIP
Infineon Technologies IR2125STRPBF	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET		16-SOIC		Non-Inverting	Surface Mount	Single	16-SOIC	0.295 in	7.5 mm
Infineon Technologies IR2125S	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET		16-SOIC		Non-Inverting	Surface Mount	Single	16-SOIC	0.295 in	7.5 mm
Infineon Technologies IR2125STR	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET		16-SOIC		Non-Inverting	Surface Mount	Single	16-SOIC	0.295 in	7.5 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.91
		10	$ 3.51
		50	$ 3.32
		100	$ 2.88
		250	$ 2.73
		500	$ 2.45
		1000	$ 2.07
		2500	$ 1.96
		5000	$ 1.89
Newark	Each	1	$ 3.69
		10	$ 3.19
		50	$ 2.80
		100	$ 2.63
		500	$ 1.71
		1000	$ 1.69
		2500	$ 1.68
		5000	$ 1.65

Description

General part information

IR2125 Series

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet