IC GATE DRVR HIGH-SIDE 8DIP
| Part | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Driven Configuration | Voltage - Supply [Max] | Voltage - Supply [Min] | Gate Type | Package / Case | Package / Case | Package / Case | Input Type | Mounting Type | Channel Type | Supplier Device Package | Package / Case [x] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 26 ns | 43 ns | 500 V | 1.6 A | 3.3 A | 2.2 V | 0.8 V | 1 | 150 °C | -40 °C | High-Side | 18 V | 0 V | IGBT N-Channel MOSFET | 0.3 in | 8-DIP | 7.62 mm | Non-Inverting | Through Hole | Single | 8-PDIP | ||
Infineon Technologies | 26 ns | 43 ns | 500 V | 1.6 A | 3.3 A | 2.2 V | 0.8 V | 1 | 150 °C | -40 °C | High-Side | 18 V | 0 V | IGBT N-Channel MOSFET | 0.3 in | 8-DIP | 7.62 mm | Non-Inverting | Through Hole | Single | 8-PDIP | ||
Infineon Technologies | 26 ns | 43 ns | 500 V | 1.6 A | 3.3 A | 2.2 V | 0.8 V | 1 | 150 °C | -40 °C | High-Side | 18 V | 0 V | IGBT N-Channel MOSFET | 16-SOIC | Non-Inverting | Surface Mount | Single | 16-SOIC | 0.295 in | 7.5 mm | ||
Infineon Technologies | 26 ns | 43 ns | 500 V | 1.6 A | 3.3 A | 2.2 V | 0.8 V | 1 | 150 °C | -40 °C | High-Side | 18 V | 0 V | IGBT N-Channel MOSFET | 16-SOIC | Non-Inverting | Surface Mount | Single | 16-SOIC | 0.295 in | 7.5 mm | ||
Infineon Technologies | 26 ns | 43 ns | 500 V | 1.6 A | 3.3 A | 2.2 V | 0.8 V | 1 | 150 °C | -40 °C | High-Side | 18 V | 0 V | IGBT N-Channel MOSFET | 16-SOIC | Non-Inverting | Surface Mount | Single | 16-SOIC | 0.295 in | 7.5 mm |