IR2125

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8DIP

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HIGH-SIDE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IR2125

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	1.6 A
Current - Peak Output (Source, Sink) [custom]	3.3 A
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	500 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	26 ns
Rise / Fall Time (Typ) [custom]	43 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	18 V
Voltage - Supply [Min]	0 V

Part	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	Voltage - Supply [Max]	Gate Type	Package / Case	Package / Case	Package / Case	Input Type	Mounting Type	Channel Type	Supplier Device Package	Package / Case [x]	Package / Case [y]
Infineon Technologies IR2125	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET	0.3 in	8-DIP	7.62 mm	Non-Inverting	Through Hole	Single	8-PDIP
Infineon Technologies IR2125PBF	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET	0.3 in	8-DIP	7.62 mm	Non-Inverting	Through Hole	Single	8-PDIP
Infineon Technologies IR2125STRPBF	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET		16-SOIC		Non-Inverting	Surface Mount	Single	16-SOIC	0.295 in	7.5 mm
Infineon Technologies IR2125S	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET		16-SOIC		Non-Inverting	Surface Mount	Single	16-SOIC	0.295 in	7.5 mm
Infineon Technologies IR2125STR	26 ns	43 ns	500 V	1.6 A	3.3 A	2.2 V	0.8 V	1	150 °C	-40 °C	High-Side	18 V	IGBT N-Channel MOSFET		16-SOIC		Non-Inverting	Surface Mount	Single	16-SOIC	0.295 in	7.5 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side Gate Driver IC Non-Inverting 8-PDIP

Technical documentation and resources