Technical Specifications
Parameters and characteristics for this part
| Specification | STH240N10F7-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 160 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 11550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH240N10F7-6 Series
These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources
DS10259
Product SpecificationsTN1225
Technical Notes & ArticlesAN4337
Application NotesFlyers (5 of 6)
AN4789
Application NotesFlyers (5 of 6)
AN3267
Application NotesTN1224
Technical Notes & ArticlesUM1575
User ManualsFlyers (5 of 6)
AN4390
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)
