STH240N10F7-6 Series

N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

Catalog

N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STH240N10F7-6	D2PAK TO-263-7	-55 °C	175 ░C	Surface Mount	MOSFET (Metal Oxide)	N-Channel	100 V	4.5 V	H2PAK-6	160 nC	300 W	10 V	20 V	11550 pF	2.5 mOhm	180 A
STMicroelectronics STH240N10F7-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	Surface Mount	MOSFET (Metal Oxide)	N-Channel	100 V	4.5 V	H2Pak-2	160 nC	300 W	10 V	20 V	11550 pF	2.5 mOhm	180 A

Catalog

N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package

Description

These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.