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STH240N10F7-6 - H2PAK-2

STH240N10F7-6

Active
STMicroelectronics

N-CHANNEL 100 V, 0.002 OHM TYP., 180 A STRIPFET F7 POWER MOSFET IN A H2PAK-6 PACKAGE

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Search across all available documentation for this part.

DocumentsAN4390DS10259+16
STH240N10F7-6 - H2PAK-2

STH240N10F7-6

Active
STMicroelectronics

N-CHANNEL 100 V, 0.002 OHM TYP., 180 A STRIPFET F7 POWER MOSFET IN A H2PAK-6 PACKAGE

Deep-Dive with AI

DocumentsAN4390DS10259+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTH240N10F7-6
Current - Continuous Drain (Id) @ 25°C180 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]160 nC
Input Capacitance (Ciss) (Max) @ Vds11550 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackageH2PAK-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.89
10$ 3.26
100$ 2.64
500$ 2.35
Digi-Reel® 1$ 3.89
10$ 3.26
100$ 2.64
500$ 2.35
Tape & Reel (TR) 1000$ 2.01
2000$ 1.89
5000$ 1.81
NewarkEach (Supplied on Cut Tape) 1$ 5.27
10$ 4.36
25$ 4.15
50$ 3.94
100$ 3.73
250$ 3.59
500$ 3.44
1000$ 3.10

Description

General part information

STH240N10F7-6 Series

These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.