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STGW40H65FB - STMICROELECTRONICS STGW30M65DF2

STGW40H65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

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DocumentsDS9908+13
STGW40H65FB - STMICROELECTRONICS STGW30M65DF2

STGW40H65FB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

Deep-Dive with AI

DocumentsDS9908+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW40H65FB
Current - Collector (Ic) (Max) [Max]80 A
Gate Charge210 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]283 W
Supplier Device PackageTO-247-3
Switching Energy498 mJ, 363 mJ
Td (on/off) @ 25°C142 ns
Td (on/off) @ 25°C40 ns
Test Condition15 V, 5 Ohm, 400 V, 40 A
Vce(on) (Max) @ Vge, Ic2.3 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.76
30$ 2.98
120$ 2.55
510$ 2.27
1020$ 1.94
2010$ 1.83
5010$ 1.76

Description

General part information

STGW40H120DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.