STGW40S120DF3

Obsolete

STMicroelectronics

IGBT 1200V 40A TO247

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

STGW40S120DF3

Obsolete

STMicroelectronics

IGBT 1200V 40A TO247

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW40S120DF3

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	129 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	468 W
Reverse Recovery Time (trr)	355 ns
Supplier Device Package	TO-247-3
Switching Energy	3.83 mJ, 1.43 mJ
Td (on/off) @ 25°C	35 ns, 148 ns
Test Condition	600 V, 15 V, 15 Ohm, 40 A
Vce(on) (Max) @ Vge, Ic	2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGW40H120DF2 Series

Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Part	Reverse Recovery Time (trr)	Supplier Device Package	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	IGBT Type	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Switching Energy	Gate Charge	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGW40S120DF3	355 ns	TO-247-3	35 ns 148 ns	2.15 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	468 W	TO-247-3	80 A	1200 V	15 V 15 Ohm 40 A 600 V	1.43 mJ 3.83 mJ	129 nC
STMicroelectronics STGW40H60DLFB		TO-247		2 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	283 W	TO-247-3	80 A	600 V	10 Ohm 15 V 40 A 400 V	363 µJ	210 nC	-	142 ns
STMicroelectronics STGW40H65FB		TO-247-3	40 ns	2.3 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	283 W	TO-247-3	80 A		5 Ohm 15 V 40 A 400 V	363 mJ 498 mJ	210 nC			142 ns	650 V
STMicroelectronics STGW40V60DLF		TO-247-3		2.3 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	283 W	TO-247-3	80 A	600 V	10 Ohm 15 V 40 A 400 V	411 µJ	226 nC		208 ns
STMicroelectronics STGW40H120DF2	488 ns	TO-247-3	18 ns 152 ns	2.6 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	468 W	TO-247-3	80 A	1200 V	10 Ohm 15 V 40 A 600 V	1 mJ 1.32 mJ	187 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGW40H120DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources