
STGW40H60DLFB
ActiveTRENCH GATE FIELD-STOP IGBT, HB SERIES 600 V, 40 A HIGH SPEED
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STGW40H60DLFB
ActiveTRENCH GATE FIELD-STOP IGBT, HB SERIES 600 V, 40 A HIGH SPEED
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGW40H60DLFB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 210 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 283 W |
| Supplier Device Package | TO-247 |
| Switching Energy | 363 µJ |
| Td (on/off) @ 25°C | - |
| Td (on/off) @ 25°C | 142 ns |
| Test Condition | 10 Ohm, 40 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
STGW40H120DF2 Series
Trench gate field-stop IGBT, HB series 600 V, 40 A high speed
| Part | Reverse Recovery Time (trr) | Supplier Device Package | Td (on/off) @ 25°C | Vce(on) (Max) @ Vge, Ic | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | IGBT Type | Power - Max [Max] | Package / Case | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 355 ns | TO-247-3 | 35 ns 148 ns | 2.15 V | -55 °C | 175 ░C | Through Hole | Trench Field Stop | 468 W | TO-247-3 | 80 A | 1200 V | 15 V 15 Ohm 40 A 600 V | 1.43 mJ 3.83 mJ | 129 nC | ||||
STMicroelectronics | TO-247 | 2 V | -55 °C | 175 ░C | Through Hole | Trench Field Stop | 283 W | TO-247-3 | 80 A | 600 V | 10 Ohm 15 V 40 A 400 V | 363 µJ | 210 nC | - | 142 ns | ||||
STMicroelectronics | TO-247-3 | 40 ns | 2.3 V | -55 °C | 175 ░C | Through Hole | Trench Field Stop | 283 W | TO-247-3 | 80 A | 5 Ohm 15 V 40 A 400 V | 363 mJ 498 mJ | 210 nC | 142 ns | 650 V | ||||
STMicroelectronics | TO-247-3 | 2.3 V | -55 °C | 175 ░C | Through Hole | Trench Field Stop | 283 W | TO-247-3 | 80 A | 600 V | 10 Ohm 15 V 40 A 400 V | 411 µJ | 226 nC | 208 ns | |||||
STMicroelectronics | 488 ns | TO-247-3 | 18 ns 152 ns | 2.6 V | -55 °C | 175 ░C | Through Hole | Trench Field Stop | 468 W | TO-247-3 | 80 A | 1200 V | 10 Ohm 15 V 40 A 600 V | 1 mJ 1.32 mJ | 187 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW40H120DF2 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources