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STP150NF04 - TO-220-3

STP150NF04

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STMicroelectronics

N-CHANNEL 40 V, 0.005 OHM, 80 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE

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DocumentsDatasheet+13
STP150NF04 - TO-220-3

STP150NF04

Active
STMicroelectronics

N-CHANNEL 40 V, 0.005 OHM, 80 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP150NF04
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds3650 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.06
50$ 1.65
100$ 1.36
500$ 1.23

Description

General part information

STP150NF04 Series

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.