STP150NF04 Series

N-channel 40 V, 0.005 Ohm, 80 A STripFET(TM) II Power MOSFET in TO-220 package

Catalog

N-channel 40 V, 0.005 Ohm, 80 A STripFET(TM) II Power MOSFET in TO-220 package

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP150NF55	Through Hole	4400 pF	4 V	TO-220-3	55 V	TO-220	190 nC	-55 °C	175 ░C	N-Channel	300 W	120 A	MOSFET (Metal Oxide)	20 V	10 V	6 mOhm
STMicroelectronics STP150NF04	Through Hole	3650 pF	4 V	TO-220-3	40 V	TO-220		-55 °C	175 ░C	N-Channel	300 W		MOSFET (Metal Oxide)	20 V	10 V	7 mOhm	150 nC

Catalog

N-channel 40 V, 0.005 Ohm, 80 A STripFET(TM) II Power MOSFET in TO-220 package

Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.