STP150NF55

Obsolete

STMicroelectronics

MOSFET N-CH 55V 120A TO220AB

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STP150NF55

Obsolete

STMicroelectronics

MOSFET N-CH 55V 120A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP150NF55

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STP150NF04 Series

N-channel 40 V, 0.005 Ohm, 80 A STripFET(TM) II Power MOSFET in TO-220 package

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP150NF55	Through Hole	4400 pF	4 V	TO-220-3	55 V	TO-220	190 nC	-55 °C	175 ░C	N-Channel	300 W	120 A	MOSFET (Metal Oxide)	20 V	10 V	6 mOhm
STMicroelectronics STP150NF04	Through Hole	3650 pF	4 V	TO-220-3	40 V	TO-220		-55 °C	175 ░C	N-Channel	300 W		MOSFET (Metal Oxide)	20 V	10 V	7 mOhm	150 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STP150NF04 Series

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources