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IPP60R125CPXKSA1 - TO-220-3

IPP60R125CPXKSA1

NRND
Infineon Technologies

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 125 MOHM;

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IPP60R125CPXKSA1 - TO-220-3

IPP60R125CPXKSA1

NRND
Infineon Technologies

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 125 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R125CPXKSA1
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)208 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.32
10$ 3.61
100$ 3.16
NewarkEach 1$ 3.02

Description

General part information

IPP60R125 Series

The IPP60R125CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.