IPP60R125 Series

Catalog

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 125 MOHM;

Part	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPP60R125C6XKSA1	PG-TO220-3	TO-220-3	Through Hole	3.5 V	N-Channel	30 A	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	125 mOhm	10 V	2127 pF	96 nC	219 W	20 V
Infineon Technologies IPP60R125P6XKSA1	PG-TO220-3	TO-220-3	Through Hole	4.5 V	N-Channel	30 A	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	125 mOhm	10 V	2660 pF		219 W	20 V	56 nC
Infineon Technologies IPP60R125CPXKSA1	PG-TO220-3	TO-220-3	Through Hole	3.5 V	N-Channel	25 A	MOSFET (Metal Oxide)	650 V	-55 °C	150 °C	125 mOhm	10 V		70 nC	208 W	20 V		2500 pF
Infineon Technologies IPP60R125CFD7XKSA1	PG-TO220-3	TO-220-3	Through Hole	4.5 V	N-Channel	18 A	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C		10 V	1503 pF			20 V	36 nC		92 W	125 mOhm