IPP60R125P6XKSA1

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Infineon Technologies

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 125 MOHM; PRICE/PERFORMANCE

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IPP60R125P6XKSA1

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Infineon Technologies

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 125 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R125P6XKSA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	219 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP60R125 Series

Part	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPP60R125C6XKSA1	PG-TO220-3	TO-220-3	Through Hole	3.5 V	N-Channel	30 A	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	125 mOhm	10 V	2127 pF	96 nC	219 W	20 V
Infineon Technologies IPP60R125P6XKSA1	PG-TO220-3	TO-220-3	Through Hole	4.5 V	N-Channel	30 A	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C	125 mOhm	10 V	2660 pF		219 W	20 V	56 nC
Infineon Technologies IPP60R125CPXKSA1	PG-TO220-3	TO-220-3	Through Hole	3.5 V	N-Channel	25 A	MOSFET (Metal Oxide)	650 V	-55 °C	150 °C	125 mOhm	10 V		70 nC	208 W	20 V		2500 pF
Infineon Technologies IPP60R125CFD7XKSA1	PG-TO220-3	TO-220-3	Through Hole	4.5 V	N-Channel	18 A	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C		10 V	1503 pF			20 V	36 nC		92 W	125 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 2.29
Newark	Each	1	$ 5.38
		10	$ 4.27
		25	$ 2.89
		50	$ 2.89
		100	$ 2.89
		250	$ 2.88
		500	$ 2.88

Description

General part information

IPP60R125 Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Documents

Technical documentation and resources