
IPD80R280P7ATMA1
ActiveInfineon Technologies
MOSFET, N-CH, 800V, 17A, TO-252 ROHS COMPLIANT: YES
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IPD80R280P7ATMA1
ActiveInfineon Technologies
MOSFET, N-CH, 800V, 17A, TO-252 ROHS COMPLIANT: YES
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD80R280P7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 101 W |
| Rds On (Max) @ Id, Vgs | 280 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPD80R Series
N-Channel 800 V 17A (Tc) 101W (Tc) Surface Mount PG-TO252-3
Documents
Technical documentation and resources