IPD80R Series

Catalog

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; DPAK TO-252 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPD80R360P7ATMA1	10 V	84 W	20 V	13 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	360 mOhm	Surface Mount	3.5 V	PG-TO252-3	930 pF	30 nC	-55 °C	150 °C
Infineon Technologies IPD80R2K8CEBTMA1	10 V		20 V	1.9 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	2.8 Ohm	Surface Mount	3.9 V	PG-TO252-3-11	290 pF		-55 °C	150 °C	42 W	12 nC
Infineon Technologies IPD80R280P7ATMA1	10 V	101 W	20 V	17 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	280 mOhm	Surface Mount	3.5 V	PG-TO252-3		36 nC	-55 °C	150 °C			1200 pF
Infineon Technologies IPD80R450P7ATMA1	10 V	73 W	20 V	11 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	450 mOhm	Surface Mount	3.5 V	PG-TO252-2	770 pF		-55 °C	150 °C		24 nC