IPD80R450P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; DPAK TO-252 PACKAGE; 450 MOHM; PRICE/PERFORMANCE

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IPD80R450P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; DPAK TO-252 PACKAGE; 450 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD80R450P7ATMA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	73 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	PG-TO252-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPD80R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPD80R360P7ATMA1	10 V	84 W	20 V	13 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	360 mOhm	Surface Mount	3.5 V	PG-TO252-3	930 pF	30 nC	-55 °C	150 °C
Infineon Technologies IPD80R2K8CEBTMA1	10 V		20 V	1.9 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	2.8 Ohm	Surface Mount	3.9 V	PG-TO252-3-11	290 pF		-55 °C	150 °C	42 W	12 nC
Infineon Technologies IPD80R280P7ATMA1	10 V	101 W	20 V	17 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	280 mOhm	Surface Mount	3.5 V	PG-TO252-3		36 nC	-55 °C	150 °C			1200 pF
Infineon Technologies IPD80R450P7ATMA1	10 V	73 W	20 V	11 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	800 V	MOSFET (Metal Oxide)	N-Channel	450 mOhm	Surface Mount	3.5 V	PG-TO252-2	770 pF		-55 °C	150 °C		24 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.23
		10	$ 1.49
		50	$ 1.29
		100	$ 1.05
		500	$ 0.83
Digikey	Cut Tape (CT)	1	$ 2.68
		10	$ 1.73
		100	$ 1.19
		500	$ 0.96
		1000	$ 0.89
	Digi-Reel®	1	$ 2.68
		10	$ 1.73
		100	$ 1.19
		500	$ 0.96
		1000	$ 0.89
	Tape & Reel (TR)	2500	$ 0.81

Description

General part information

IPD80R Series

800V CoolMOS™ P7superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on)products. Overall, it helps customers save BOM cost and reduce assembly effort.

Documents

Technical documentation and resources