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CSD17318Q2T - 6-WSON

CSD17318Q2T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 16.9 MOHM 6-WSON -55 TO 150

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CSD17318Q2T - 6-WSON

CSD17318Q2T

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 16.9 MOHM 6-WSON -55 TO 150

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCSD17318Q2TCSD17318Q2 Series
Current - Continuous Drain (Id) @ 25°C25 A25 A
Drain to Source Voltage (Vdss)30 V30 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 2.5 V2.5 - 8 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]879 pF879 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Power Dissipation (Max) [Max]16 W16 W
Rds On (Max) @ Id, Vgs15.1 mOhm15.1 mOhm
Supplier Device Package6-WSON (2x2)6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max) [Max]10 V10 V
Vgs (Max) [Min]-10 V-10 V
Vgs(th) (Max) @ Id [Max]1.2 V1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Arrow ElectronicsN/A 1$ 0.61
10$ 0.51
25$ 0.41
250$ 0.41
Chip1StopN/A 1$ 0.39
10$ 0.37
50$ 0.37
100$ 0.39
200$ 0.38
500$ 0.36
DigiKeyN/A 1$ 1.65
10$ 1.05
100$ 0.70
250$ 0.55
500$ 0.50
750$ 0.48
1250$ 0.45
1750$ 0.43
2500$ 0.42
6250$ 0.40
DigikeyCut Tape (CT) 1$ 1.07
10$ 0.88
100$ 0.68
Digi-Reel® 1$ 1.07
10$ 0.88
100$ 0.68
Tape & Reel (TR) 250$ 0.52
500$ 0.47
750$ 0.45
1250$ 0.42
1750$ 0.40
LCSCN/A 1$ 0.74
10$ 0.63
30$ 0.57
250$ 0.50
500$ 0.43
1000$ 0.42
Mouser ElectronicsN/A 1$ 0.89
10$ 0.63
100$ 0.47
250$ 0.47
500$ 0.43
1000$ 0.40
TMEN/A 1$ 0.86
5$ 0.78
25$ 0.69
100$ 0.62
250$ 0.57
Texas InstrumentsSMALL T&R 1$ 0.92
100$ 0.63
250$ 0.48
1000$ 0.32
VericalN/A 15$ 0.51
25$ 0.41

CSD17318Q2 Series

30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm

PartSupplier Device PackagePower Dissipation (Max) [Max]Vgs (Max) [Max]Vgs (Max) [Min]Drain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ Vds [Max]TechnologyCurrent - Continuous Drain (Id) @ 25°CFET TypeMounting TypeGate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ Id [Max]Operating Temperature [Max]Operating Temperature [Min]Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments
CSD17318Q2T
6-WSON (2x2)
16 W
10 V
-10 V
30 V
15.1 mOhm
879 pF
MOSFET (Metal Oxide)
25 A
N-Channel
Surface Mount
6 nC
1.2 V
150 °C
-55 °C
2.5 V, 8 V
Texas Instruments
CSD17318Q2
6-WSON (2x2)
16 W
10 V
-10 V
30 V
15.1 mOhm
879 pF
MOSFET (Metal Oxide)
25 A
N-Channel
Surface Mount
6 nC
1.2 V
150 °C
-55 °C
2.5 V, 8 V

Description

General part information

CSD17318Q2 Series

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.

This 30V, 12.6mΩ, 2mm × 2mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2mm × 2mm SON offers excellent thermal performance for the size of the package.