IPL65R165CFDAUMA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 165 MOHM; FAST RECOVERY DIODE

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IPL65R165CFDAUMA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 165 MOHM; FAST RECOVERY DIODE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPL65R165CFDAUMA1

Current - Continuous Drain (Id) @ 25°C	21.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	195 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPL65R Series

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Infineon Technologies IPL65R130C7AUMA1	Surface Mount	15 A	150 °C	-40 °C	N-Channel	10 V	102 W	1670 pF	20 V	650 V	130 mOhm	4 V	MOSFET (Metal Oxide)	35 nC	PG-VSON-4	4-PowerTSFN
Infineon Technologies IPL65R190E6AUMA1	Surface Mount	20.2 A	150 °C	-40 °C	N-Channel	10 V	151 W		20 V	650 V	190 mOhm		MOSFET (Metal Oxide)		PG-VSON-4	4-PowerTSFN	3.5 V	1620 pF	73 nC
Infineon Technologies IPL65R340CFDAUMA2	Surface Mount	10.9 A	150 °C	-40 °C	N-Channel	10 V	104.2 W		20 V	650 V	340 mOhm	4.5 V	MOSFET (Metal Oxide)	41 nC	PG-VSON-4	4-PowerTSFN
Infineon Technologies IPL65R460CFDAUMA1	Surface Mount	8.3 A	150 °C	-40 °C	N-Channel	10 V	83.3 W		20 V	650 V	460 mOhm	4.5 V	MOSFET (Metal Oxide)		PG-VSON-4	4-PowerTSFN		870 pF		31.5 nC
Infineon Technologies IPL65R165CFDAUMA1	Surface Mount	21.3 A	150 °C	-40 °C	N-Channel	10 V		2340 pF	20 V	650 V	165 mOhm	4.5 V	MOSFET (Metal Oxide)	86 nC	PG-VSON-4	4-PowerTSFN					195 W
Infineon Technologies IPL65R165CFDAUMA2	Surface Mount	21.3 A	150 °C	-40 °C	N-Channel	10 V		2340 pF	20 V	650 V	165 mOhm	4.5 V	MOSFET (Metal Oxide)	86 nC	PG-VSON-4	4-PowerTSFN					195 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPL65R Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

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