IPL65R Series

Catalog

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 8X8 PACKAGE; 130 MOHM; HIGHEST PERFORMANCE

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Infineon Technologies IPL65R130C7AUMA1	Surface Mount	15 A	150 °C	-40 °C	N-Channel	10 V	102 W	1670 pF	20 V	650 V	130 mOhm	4 V	MOSFET (Metal Oxide)	35 nC	PG-VSON-4	4-PowerTSFN
Infineon Technologies IPL65R190E6AUMA1	Surface Mount	20.2 A	150 °C	-40 °C	N-Channel	10 V	151 W		20 V	650 V	190 mOhm		MOSFET (Metal Oxide)		PG-VSON-4	4-PowerTSFN	3.5 V	1620 pF	73 nC
Infineon Technologies IPL65R340CFDAUMA2	Surface Mount	10.9 A	150 °C	-40 °C	N-Channel	10 V	104.2 W		20 V	650 V	340 mOhm	4.5 V	MOSFET (Metal Oxide)	41 nC	PG-VSON-4	4-PowerTSFN
Infineon Technologies IPL65R460CFDAUMA1	Surface Mount	8.3 A	150 °C	-40 °C	N-Channel	10 V	83.3 W		20 V	650 V	460 mOhm	4.5 V	MOSFET (Metal Oxide)		PG-VSON-4	4-PowerTSFN		870 pF		31.5 nC
Infineon Technologies IPL65R165CFDAUMA1	Surface Mount	21.3 A	150 °C	-40 °C	N-Channel	10 V		2340 pF	20 V	650 V	165 mOhm	4.5 V	MOSFET (Metal Oxide)	86 nC	PG-VSON-4	4-PowerTSFN					195 W
Infineon Technologies IPL65R165CFDAUMA2	Surface Mount	21.3 A	150 °C	-40 °C	N-Channel	10 V		2340 pF	20 V	650 V	165 mOhm	4.5 V	MOSFET (Metal Oxide)	86 nC	PG-VSON-4	4-PowerTSFN					195 W