IPL65R190E6AUMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 20.2A 4VSON

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPL65R190E6AUMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 20.2A 4VSON

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPL65R190E6AUMA1

Current - Continuous Drain (Id) @ 25°C	20.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	1620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max) [Max]	151 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

IPL65R Series

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Infineon Technologies IPL65R130C7AUMA1	Surface Mount	15 A	150 °C	-40 °C	N-Channel	10 V	102 W	1670 pF	20 V	650 V	130 mOhm	4 V	MOSFET (Metal Oxide)	35 nC	PG-VSON-4	4-PowerTSFN
Infineon Technologies IPL65R190E6AUMA1	Surface Mount	20.2 A	150 °C	-40 °C	N-Channel	10 V	151 W		20 V	650 V	190 mOhm		MOSFET (Metal Oxide)		PG-VSON-4	4-PowerTSFN	3.5 V	1620 pF	73 nC
Infineon Technologies IPL65R340CFDAUMA2	Surface Mount	10.9 A	150 °C	-40 °C	N-Channel	10 V	104.2 W		20 V	650 V	340 mOhm	4.5 V	MOSFET (Metal Oxide)	41 nC	PG-VSON-4	4-PowerTSFN
Infineon Technologies IPL65R460CFDAUMA1	Surface Mount	8.3 A	150 °C	-40 °C	N-Channel	10 V	83.3 W		20 V	650 V	460 mOhm	4.5 V	MOSFET (Metal Oxide)		PG-VSON-4	4-PowerTSFN		870 pF		31.5 nC
Infineon Technologies IPL65R165CFDAUMA1	Surface Mount	21.3 A	150 °C	-40 °C	N-Channel	10 V		2340 pF	20 V	650 V	165 mOhm	4.5 V	MOSFET (Metal Oxide)	86 nC	PG-VSON-4	4-PowerTSFN					195 W
Infineon Technologies IPL65R165CFDAUMA2	Surface Mount	21.3 A	150 °C	-40 °C	N-Channel	10 V		2340 pF	20 V	650 V	165 mOhm	4.5 V	MOSFET (Metal Oxide)	86 nC	PG-VSON-4	4-PowerTSFN					195 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPL65R Series

N-Channel 650 V 20.2A (Tc) 151W (Tc) Surface Mount PG-VSON-4

Documents

Technical documentation and resources