
IKW50N65ET7XKSA1
ActiveInfineon Technologies
THE IKW50N65ET7 IS A 650 V, 50 A TRENCHSTOP™ IGBT7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
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IKW50N65ET7XKSA1
ActiveInfineon Technologies
THE IKW50N65ET7 IS A 650 V, 50 A TRENCHSTOP™ IGBT7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IKW50N65ET7XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 273 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 93 ns |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 1.2 mJ, 850 µJ |
| Td (on/off) @ 25°C | 350 ns |
| Td (on/off) @ 25°C | 26 ns |
| Test Condition | 9 Ohm, 400 V, 15 V, 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKW50N65 Series
Hard-switching 650 V, 50 ATRENCHSTOP™ IGBT7discrete in TO-247 package with soft EC7 diode inside. This price performance optimized range has premium controllability for the better EMI while switching losses are lower than the former technologies.
Documents
Technical documentation and resources