THE IKW50N65ET7 IS A 650 V, 50 A TRENCHSTOP™ IGBT7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE
| Part | Package / Case | Test Condition | Mounting Type | Qualification | Reverse Recovery Time (trr) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Collector Pulsed (Icm) | IGBT Type | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Voltage - Collector Emitter Breakdown (Max) | Switching Energy | Current - Collector (Ic) (Max) | Grade | Power - Max [Max] | Supplier Device Package | Gate Charge | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) [Max] | Switching Energy [custom] | Switching Energy [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-247-3 | 9 Ohm 15 V 50 A 400 V | Through Hole | AEC-Q101 | 93 ns | -40 C | 175 °C | 150 A | Trench Field Stop | 350 ns | 26 ns | 650 V | 1.2 mJ 850 µJ | 50 A | Automotive | 273 W | PG-TO247-3 | |||||
Infineon Technologies | TO-247-3 | 12 Ohm 15 V 25 A 400 V | Through Hole | 52 ns | -40 C | 175 °C | 150 A | 650 V | 160 µJ 490 µJ | 305 W | PG-TO247-3 | 120 nC | 2.1 V | 80 A | ||||||||
Infineon Technologies | TO-247-3 | 9 Ohm 15 V 50 A 400 V | Through Hole | -40 C | 175 °C | 200 A | Trench Field Stop | 20 ns 140 ns | 650 V | 274 W | PG-TO247-3 | 110 nC | 1.7 V | 80 A | 320 µJ | 550 µJ |