
IKW50N65SS5XKSA1
ActiveTHE IKW50N65SS5 IS A 650 V, 50 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE
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IKW50N65SS5XKSA1
ActiveTHE IKW50N65SS5 IS A 650 V, 50 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IKW50N65SS5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 110 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 274 W |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy [custom] | 320 µJ |
| Switching Energy [custom] | 550 µJ |
| Td (on/off) @ 25°C | 20 ns, 140 ns |
| Test Condition | 9 Ohm, 400 V, 15 V, 50 A |
| Vce(on) (Max) @ Vge, Ic | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKW50N65 Series
650 V, 50 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of theTRENCHSTOP™ 5 S5IGBT technology with thefreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values.
Documents
Technical documentation and resources