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IKW50N65SS5XKSA1 - INFINEON IKZA75N65RH5XKSA1

IKW50N65SS5XKSA1

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Infineon Technologies

THE IKW50N65SS5 IS A 650 V, 50 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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IKW50N65SS5XKSA1 - INFINEON IKZA75N65RH5XKSA1

IKW50N65SS5XKSA1

Active
Infineon Technologies

THE IKW50N65SS5 IS A 650 V, 50 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW50N65SS5XKSA1
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)200 A
Gate Charge110 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]274 W
Supplier Device PackagePG-TO247-3
Switching Energy [custom]320 µJ
Switching Energy [custom]550 µJ
Td (on/off) @ 25°C20 ns, 140 ns
Test Condition9 Ohm, 400 V, 15 V, 50 A
Vce(on) (Max) @ Vge, Ic1.7 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 9.10
30$ 5.41
120$ 4.98
NewarkEach 1$ 11.87
10$ 10.77
25$ 8.42
50$ 8.04
100$ 7.64
480$ 7.63
720$ 7.60

Description

General part information

IKW50N65 Series

650 V, 50 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of theTRENCHSTOP™ 5 S5IGBT technology with thefreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values.

Documents

Technical documentation and resources