IPD30N06S223ATMA2

Active

Infineon Technologies

IPD30N06S2-23 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 23 MΩ MAX, DPAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, AND ULTRA LOW RDS(ON).

Search across all available documentation for this part.

Active

Infineon Technologies

IPD30N06S2-23 IS AN AUTOMOTIVE MOSFET OFFERING 55V, N-CH, 23 MΩ MAX, DPAK, OPTIMOS™, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, AND ULTRA LOW RDS(ON).

Technical Specifications

Parameters and characteristics for this part

Specification	IPD30N06S223ATMA2

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	901 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD30N06S215ATMA2	20 V	1485 pF	4 V	-55 °C	175 ░C	136 W	110 nC	55 V	14.7 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V
Infineon Technologies IPD30N06S2L23ATMA3	20 V	1091 pF	2 V	-55 °C	175 ░C			55 V	23 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	100 W	42 nC
Infineon Technologies IPD30N06S2L13ATMA4	20 V	1800 pF	2 V	-55 °C	175 ░C	136 W	69 nC	55 V	13 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V
Infineon Technologies IPD30N06S223ATMA2	20 V	901 pF	4 V	-55 °C	175 ░C			55 V	23 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	100 W	32 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources