IPD30N06S2L23ATMA3

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Infineon Technologies

INFINEON’S IPD30N06S2L-23 IS AN N-CHANNEL MOSFET WITH 175°C OPERATING TEMP, ULTRA LOW RDS(ON), AND AEC Q101 QUALIFICATION. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsDatasheet Infineon-MA001910762-MaterialContentSheet-v01_00-EN +1

IPD30N06S2L23ATMA3

Active

Infineon Technologies

INFINEON’S IPD30N06S2L-23 IS AN N-CHANNEL MOSFET WITH 175°C OPERATING TEMP, ULTRA LOW RDS(ON), AND AEC Q101 QUALIFICATION. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsDatasheet Infineon-MA001910762-MaterialContentSheet-v01_00-EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD30N06S2L23ATMA3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1091 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

IPD30N06 Series

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPD30N06S215ATMA2	20 V	1485 pF	4 V	-55 °C	175 ░C	136 W	110 nC	55 V	14.7 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V
Infineon Technologies IPD30N06S2L23ATMA3	20 V	1091 pF	2 V	-55 °C	175 ░C			55 V	23 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	100 W	42 nC
Infineon Technologies IPD30N06S2L13ATMA4	20 V	1800 pF	2 V	-55 °C	175 ░C	136 W	69 nC	55 V	13 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V
Infineon Technologies IPD30N06S223ATMA2	20 V	901 pF	4 V	-55 °C	175 ░C			55 V	23 mOhm	N-Channel	Surface Mount	30 A	PG-TO252-3-11	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	100 W	32 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.36
		10	$ 0.87
		100	$ 0.58
		500	$ 0.50
	Digi-Reel®	1	$ 1.36
		10	$ 0.87
		100	$ 0.58
		500	$ 0.50
	Tape & Reel (TR)	2500	$ 0.50
Newark	Each (Supplied on Full Reel)	2500	$ 0.48

Description

General part information

IPD30N06 Series

N-Channel 55 V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11

Documents

Technical documentation and resources

Datasheet

Infineon-MA001910762-MaterialContentSheet-v01_00-EN

Material Content SheetInfo

IPD30N06S2L-23

Data Sheets