INFINEON’S IPD30N06S2-15 IS AN N-CHANNEL MOSFET WITH 175°C MAX TEMP, ULTRA LOW RDS(ON), AND AEC Q101 QUALIFICATION. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 1485 pF | 4 V | -55 °C | 175 ░C | 136 W | 110 nC | 55 V | 14.7 mOhm | N-Channel | Surface Mount | 30 A | PG-TO252-3-11 | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 V | ||
Infineon Technologies | 20 V | 1091 pF | 2 V | -55 °C | 175 ░C | 55 V | 23 mOhm | N-Channel | Surface Mount | 30 A | PG-TO252-3-11 | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.5 V 10 V | 100 W | 42 nC | ||
Infineon Technologies | 20 V | 1800 pF | 2 V | -55 °C | 175 ░C | 136 W | 69 nC | 55 V | 13 mOhm | N-Channel | Surface Mount | 30 A | PG-TO252-3-11 | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.5 V 10 V | ||
Infineon Technologies | 20 V | 901 pF | 4 V | -55 °C | 175 ░C | 55 V | 23 mOhm | N-Channel | Surface Mount | 30 A | PG-TO252-3-11 | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 V | 100 W | 32 nC |